JNTUK ELECTRONIC DEVICES AND CIRCUITS 2011 Question Paper

Question Paper University : Jawaharlal Nehru Technlogical University , Kakinada.
Question Paper Course  :  B.Tech 1st year.
Question Paper Subject  : ELECTRONIC DEVICES AND CIRCUITS.
Question Paper Year of Exam  : June 2011.
Question Paper Attachment : Text
Question Paper Set : 1 to 4.
Question Paper Version : Type Version.

R07 Code.No: R07A1EC06 SET-1
I B.TECH – EXAMINATIONS, JUNE - 2011
ELECTRONIC DEVICES AND CIRCUITS
(COMMON TO EEE, ECE, CSE, ECOMPE, EIE, ETM, IT, ICE, BME)
Time: 3 hours Max. Marks: 80
Answer any FIVE questions
All questions carry equal marks
- - -
1.a) Explain the construction and working of CRT.

b) An infinitely large parallel plane plates are spaced 0.8 cm apart. The voltage at one of the plates is raised from 0 to 5 V in one nano sec at a uniform rate with respect to the other. After this duration the potential difference between the plates is suddenly dropped to ‘0’ volts and remain the same there after. Find
i) The position of the electron, which started with zero initial velocity from the
negative plate, when the potential difference drops to zero volt.
ii) The total time of transit of electron from the cathode to the anode. [8+8]

2.a) Explain Hall effect. What are its applications?
b) Derive the expression for the transition capacitance of a reverse biased p-n junction diode. [8+8]

3.a) Why is that filtering is easier in FWR outputs? Explain the terms “Ripple Factor”, PIV, regulation and rectification efficiency as referred to rectifier circuits.

b) A FWR makes use of a π - section filter with two 8µf capacitors and one 20 H choke. The secondary voltage is 300 V w.r.t center tap. If the load current is 40 mA, determine the D.C output voltage and ripple without neglecting the choke resistance of 300Ω. [8+8]

4.a) Explain the current components of a transistor. What is early effect? What are its consequences?

b) Draw the characteristics and explain the operation of enhancement and depletion mode MOSFETS. [8+8]

5. a) What are the factors that effect the stability of operating point? Discuss.
b) Define stability factor. Derive the expression for stability factor for a self biased CE amplifier circuit. [8+8]

6. Draw the approximate hybrid model of a transistor amplifier and derive the expressions for current gain, input impedance, voltage gain and output impedance of a CE amplifier. [16]

7. a) Explain the effect of negative feedback on bandwidth and noise in an amplifier.
 b) Distinguish between positive and negative feedback in amplifiers. [8+8]

8.a) State and explain the Barkhausen criterion.
b) Derive the expression for the frequency of oscillations for the RC phase shift oscillator. [8+8]
* * * * * *

R07 Code.No: R07A1EC06 SET-2
I B.TECH – EXAMINATIONS, JUNE - 2011
ELECTRONIC DEVICES AND CIRCUITS
(COMMON TO EEE, ECE, CSE, ECOMPE, EIE, ETM, IT, ICE, BME)
Time: 3hours Max.Marks:80
Answer any FIVE questions
All questions carry equal marks
- - -
1. a) Why is that filtering is easier in FWR outputs? Explain the terms “Ripple Factor”, PIV, regulation and rectification efficiency as referred to rectifier circuits.
b) A FWR makes use of a π - section filter with two 8µf capacitors and one 20 H choke. The secondary voltage is 300 V w.r.t center tap. If the load current is 40mA, determine the D.C output voltage and ripple without neglecting the choke resistance of 300Ω. [8+8]

2.a) Explain the current components of a transistor. What is early effect? What are its consequences?
 b) Draw the characteristics and explain the operation of enhancement and depletion mode MOSFETS. [8+8]

3. a) What are the factors that effect the stability of operating point? Discuss.
b) Define stability factor. Derive the expression for stability factor for a self biased CE amplifier circuit. [8+8]

4. Draw the approximate hybrid model of a transistor amplifier and derive the expressions for current gain, input impedance, voltage gain and output impedance of a CE amplifier. [16]

5.a) Explain the effect of negative feedback on bandwidth and noise in an amplifier.
 b) Distinguish between positive and negative feedback in amplifiers. [8+8]

6.a) State and explain the Barkhausen criterion.
 b) Derive the expression for the frequency of oscillations for the RC phase shift oscillator. [8+8]

7.a) Explain the construction and working of CRT.
b) An infinitely large parallel plane plates are spaced 0.8 cm apart. The voltage at one of the plates is raised from 0 to 5 V in one nano sec at a uniform rate with respect to the other. After this duration the potential difference between the plates is suddenly dropped to ‘0’ volts and remain the same there after. Find i) The position of the electron, which started with zero initial velocity from the
negative plate, when the potential difference drops to zero volt.
ii) The total time of transit of electron from the cathode to the anode. [8+8]

8. a) Explain Hall effect. What are its applications?
b) Derive the expression for the transition capacitance of a reverse biased p-n junction diode. [8+8]
* * * * * *

R07 Code.No: R07A1EC06 SET-3
I B.TECH – EXAMINATIONS, JUNE - 2011
ELECTRONIC DEVICES AND CIRCUITS
(COMMON TO EEE, ECE, CSE, ECOMPE, EIE, ETM, IT, ICE, BME)
Time: 3hours Max.Marks:80
Answer any FIVE questions
All questions carry equal marks
- - -
1.a) What are the factors that effect the stability of operating point? Discuss.
b) Define stability factor. Derive the expression for stability factor for a self biased CE amplifier circuit. [8+8]

2. Draw the approximate hybrid model of a transistor amplifier and derive the expressions for current gain, input impedance, voltage gain and output impedance of a CE amplifier. [16]

3.a) Explain the effect of negative feedback on bandwidth and noise in an amplifier.
 b) Distinguish between positive and negative feedback in amplifiers. [8+8]

4.a) State and explain the Barkhausen criterion.
 b) Derive the expression for the frequency of oscillations for the RC phase shift oscillator. [8+8]

5.a) Explain the construction and working of CRT.
b) An infinitely large parallel plane plates are spaced 0.8 cm apart. The voltage at one of the plates is raised from 0 to 5 V in one nano sec at a uniform rate with respect to the other. After this duration the potential difference between the plates is suddenly dropped to ‘0’ volts and remain the same there after. Find
i) The position of the electron, which started with zero initial velocity from the negative plate, when the potential difference drops to zero volt.
ii) The total time of transit of electron from the cathode to the anode. [8+8]

6.a) Explain Hall effect. What are its applications?
b) Derive the expression for the transition capacitance of a reverse biased p-n junction diode. [8+8]

7.a) Why is that filtering is easier in FWR outputs? Explain the terms “Ripple Factor”, PIV, regulation and rectification efficiency as referred to rectifier circuits.
b) A FWR makes use of a π - section filter with two 8µf capacitors and one 20 H choke. The secondary voltage is 300 V w.r.t center tap. If the load current is 40mA, determine the D.C output voltage and ripple without neglecting the choke resistance of 300Ω. [8+8]

8.a) Explain the current components of a transistor. What is early effect? What are its consequences?
b) Draw the characteristics and explain the operation of enhancement and depletion mode MOSFETS. [8+8]
* * * * * *

R07 Code.No: R07A1EC06 SET-4
I B.TECH – EXAMINATIONS, JUNE - 2011
ELECTRONIC DEVICES AND CIRCUITS
(COMMON TO EEE, ECE, CSE, ECOMPE, EIE, ETM, IT, ICE, BME)
Time: 3hours Max.Marks:80
Answer any FIVE questions
All questions carry equal marks
- - -
1.a) Explain the effect of negative feedback on bandwidth and noise in an amplifier.
 b) Distinguish between positive and negative feedback in amplifiers. [8+8]

2.a) State and explain the Barkhausen criterion.
 b) Derive the expression for the frequency of oscillations for the RC phase shift oscillator. [8+8]

3.a) Explain the construction and working of CRT.
b) An infinitely large parallel plane plates are spaced 0.8 cm apart. The voltage at one of the plates is raised from 0 to 5 V in one nano sec at a uniform rate with respect to the other. After this duration the potential difference between the plates is suddenly dropped to ‘0’ volts and remain the same there after. Find
i) The position of the electron, which started with zero initial velocity from the
negative plate, when the potential difference drops to zero volt.
ii) The total time of transit of electron from the cathode to the anode. [8+8]

4.a) Explain Hall effect. What are its applications?
b) Derive the expression for the transition capacitance of a reverse biased p-n junction diode. [8+8]

5.a) Why is that filtering is easier in FWR outputs? Explain the terms “Ripple Factor”, PIV, regulation and rectification efficiency as referred to rectifier circuits.
b) A FWR makes use of a π - section filter with two 8µf capacitors and one 20 H choke. The secondary voltage is 300 V w.r.t center tap. If the load current is 40mA, determine the D.C output voltage and ripple without neglecting the choke resistance of 300Ω. [8+8]

6.a) Explain the current components of a transistor. What is early effect? What are its consequences?
 b) Draw the characteristics and explain the operation of enhancement and depletion mode MOSFETS. [8+8]

7.a) What are the factors that effect the stability of operating point? Discuss.
b) Define stability factor. Derive the expression for stability factor for a self biased CE amplifier circuit. [8+8]

8. Draw the approximate hybrid model of a transistor amplifier and derive the expressions for current gain, input impedance, voltage gain and output impedance of a CE amplifier. [16]
* * * * * *

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