Dr.A.P.J.Abdul Kalam University BE LATERAL III SEM ALL BRANCH Electronic Devices & Circuits (EC223T) Dec - 2020 Question Paper

Dr.A.P.J.Abdul Kalam University

Bachelor of Engineering

Third Semester Main Examination, Dec-2020

Electronic Devices & Circuits (EC223T)

Branch-EC

Time: 3:00 Hrs Max Marks 70

Note: (i) Attempt any five questions out of eight.

          (ii) Assume suitable data if necessary & state them clearly

Q.1 (a) Explain briefly about the semiconductor and its types. 7

(b) What is biasing? Explain the need of it. List out different types of biasing methods. 7

Q.2 (a) In a silicon transistor circuit with a fixed bias Vcc=9v,

Rc=3kΩ, RB=8kΩ, β=50 & VBE=0.7 V. Find the operating point &

stability factor. 7

(b) Explain the operation of cc configuration of BJT and its input

& output characteristic briefly. 7

Q.3 (a) Explain the Avalanche and Zener Breakdowns in PN Junction diode. 7

(b) For a Ge diode, the Io = 2 μA and the voltage of 0.26 V is applied. Calculate the forward and reverse dynamic resistance value at room temperature. 7

Q.4 (a) Discuss analysis of transistor amplifier using h-parameter in CE configuration. 7

(b) Briefly explain current mirror circuit. 7

Q.5 (a) Explain the working of n-channel enhancement MOSFET. 7

(b) Explain the construction and working of P-channel JEFT. 7

Q.6 (a) Write the difference between BJT & FET. 7

(b) Explain the working of class C amplifier. 7

Q.7 (a) What is UJT? Write its characteristics. 7

(b) Compare Diac and Triac. 7

Q.8 Write short notes on (Any 2) 14

(a) Photo diodes

(b) Ebers-Moll model

(c) Silicon controlled rectifier (SCR)

(d) Thyristor’s applications

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